mtd: fsl_elbc_nand: remove unnecessary badblock_pattern
Since the introduction of nand_create_default_bbt_descr() (now known as nand_create_badblock_pattern()) in commit58373ff0af
nand_chip.badblock_pattern will be dynamically calculated to the same 1-byte-length pattern that is required by fsl_elbc_nand. This custom badblock_pattern is no longer needed, then, and its removal may help facilitate further nand_bbt.c/nand_base.c cleanup in the future (one down, many to go?) Anyway, with nand_bbt.c fixed, this effectively reverts: commit452db27243
[MTD] [NAND] fsl_elbc_nand: fix OOB workability for large page NAND chips Signed-off-by: Brian Norris <computersforpeace@gmail.com> Cc: Scott Wood <scottwood@freescale.com> Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
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30fad64325
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@ -108,20 +108,6 @@ static struct nand_ecclayout fsl_elbc_oob_lp_eccm1 = {
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.oobfree = { {1, 7}, {11, 13}, {27, 13}, {43, 13}, {59, 5} },
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};
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/*
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* fsl_elbc_oob_lp_eccm* specify that LP NAND's OOB free area starts at offset
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* 1, so we have to adjust bad block pattern. This pattern should be used for
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* x8 chips only. So far hardware does not support x16 chips anyway.
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*/
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static u8 scan_ff_pattern[] = { 0xff, };
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static struct nand_bbt_descr largepage_memorybased = {
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.options = 0,
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.offs = 0,
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.len = 1,
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.pattern = scan_ff_pattern,
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};
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/*
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* ELBC may use HW ECC, so that OOB offsets, that NAND core uses for bbt,
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* interfere with ECC positions, that's why we implement our own descriptors.
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@ -699,7 +685,6 @@ static int fsl_elbc_chip_init_tail(struct mtd_info *mtd)
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chip->ecc.layout = (priv->fmr & FMR_ECCM) ?
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&fsl_elbc_oob_lp_eccm1 :
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&fsl_elbc_oob_lp_eccm0;
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chip->badblock_pattern = &largepage_memorybased;
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}
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} else {
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dev_err(priv->dev,
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