mtd: clear cache_state to avoid writing to bad blocks repeatedly
The function call process is as follows: mtd_blktrans_work() while (1) do_blktrans_request() mtdblock_writesect() do_cached_write() write_cached_data() /*if cache_state is STATE_DIRTY*/ erase_write() write_cached_data() returns failure without modifying cache_state and cache_offset. So when do_cached_write() is called again, write_cached_data() will be called again to perform erase_write() on the same cache_offset. But if this cache_offset points to a bad block, erase_write() will always return -EIO. Writing to this mtdblk is equivalent to losing the current data, and repeatedly writing to the bad block. Repeatedly writing a bad block has no real benefits, but brings some negative effects: 1 Lost subsequent data 2 Loss of flash device life 3 erase_write() bad blocks are very time-consuming. For example: the function do_erase_oneblock() in chips/cfi_cmdset_0020.c or chips/cfi_cmdset_0002.c may take more than 20 seconds to return Therefore, when erase_write() returns -EIO in write_cached_data(), clear cache_state to avoid writing to bad blocks repeatedly. Signed-off-by: Xiaoming Ni <nixiaoming@huawei.com> Reviewed-by: Miquel Raynal <miquel.raynal@bootlin.com> Signed-off-by: Richard Weinberger <richard@nod.at>
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@ -89,8 +89,6 @@ static int write_cached_data (struct mtdblk_dev *mtdblk)
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ret = erase_write (mtd, mtdblk->cache_offset,
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mtdblk->cache_size, mtdblk->cache_data);
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if (ret)
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return ret;
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/*
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* Here we could arguably set the cache state to STATE_CLEAN.
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@ -98,9 +96,14 @@ static int write_cached_data (struct mtdblk_dev *mtdblk)
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* be notified if this content is altered on the flash by other
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* means. Let's declare it empty and leave buffering tasks to
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* the buffer cache instead.
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*
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* If this cache_offset points to a bad block, data cannot be
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* written to the device. Clear cache_state to avoid writing to
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* bad blocks repeatedly.
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*/
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mtdblk->cache_state = STATE_EMPTY;
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return 0;
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if (ret == 0 || ret == -EIO)
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mtdblk->cache_state = STATE_EMPTY;
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return ret;
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}
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